°¨Ãß±â
À§Å¶ ºê·£µå Ãâ½Ã
¹ÝµµÃ¼/R/L/C > Æ®·£Áö½ºÅÍ/FETÃÑ 393°³ÀÇ »óǰÀÌ ÀÖ½À´Ï´Ù.
Á¦Á¶»ç »óǰ¸í °¡°Ý Àû¸³±Ý ¸ñ·Ï¼ö
HEXFET, Nä³Î, Vd = 100V, Rds = 44m§Ù, Id = 33A, D2-PakÆÐŰÁö
18¿ø 1,770¿ø
HEXFET, Pä³Î, Vd = -12V, Rds = 0.007§Ù, Id = -16A, SOIC8ÇÉ
18¿ø 1,800¿ø
HEXFET, Nä³Î, Vd = 30V, Rds = 0.030§Ù, Id = 7.3A , SOIC8ÇÉ
7¿ø 690¿ø
HEXFET, Nä³Î, Vd = 200V, Rds = 1.5§Ù, Id = 2.6A , D-PackÆÐŰÁö
16¿ø 1,560¿ø
Nä³Î MOSFET, SOT23ÆÐŰÁö, Vdss=30V, Rds=0.25, Id = 1.2A
36¿ø 3,600¿ø
HEXFET, Nä³Î, Vd = 20V, Rds = 0.045§Ù, Id = 4.2A, SOT-23ÆÐŰÁö
24¿ø 2,400¿ø
NONPBÁ¦Ç°ÀÔ´Ï´Ù. Nä³Î MOSFET, SMD-220ŸÀÔ, Nä³Î, Vdss = 200V, Rds = 0.18ohm, Id = 18A
12¿ø 1,200¿ø
Pä³Î MOSFET, ÃʼÒÇü SOT23ÆÐŰÁö, HEXFET, Vd = -12V, Rds = 0.05§Ù, Id = 48A, Id = 4.3A
24¿ø 2,400¿ø
HEXFET, Nä³Î, Vd = 500V, Rds = 0.85§Ù, Id = 8.0A, D2-Pak
13¿ø 1,320¿ø
HEXFET, Pä³Î, Vd = -30V, Rds = 0.045§Ù, Id = -5.8A, SOIC8ÇÉ ÆÐŰÁö
9¿ø 900¿ø
HEXFET, Nä³Î , Vd = 50V, Rds = 0.130§Ù, Id = 3.0A, SOIC 8ÇÉ, MOSFET2°³
9¿ø 940¿ø
HEXFET Power MOSFET, Pä³Î, Vd = -55V, Rds = 20m§Ù, Id = -42A, D2PakÆÐŰÁö
29¿ø 2,880¿ø
MOSFET, Nä³Î, Vd = 55V, Rds = 0.14¥Ø, Id = 2.0A, SOT-223ÆÐŰÁö
5¿ø 480¿ø
P-Channel HEXFET Power MOSFET, Vdss = -20V, Rds = 0.040§Ù, Id = -6.7A @ 25µµ Vgs =-4.5V
11¿ø 1,080¿ø
¼Ò½ÅÈ£¿ë P-Channel MOSFET, Vdss = -20V, Rds = 0.60§Ù, SOT-23
24¿ø 2,400¿ø
ÃʼÒÇü ÆÐŰÁöÀÇ MOSFET CPUÄÚ¾î DC-DCÄÁ¹öÅÍ¿¡ Àû´ç.., Nä³Î, Vd = 30V, Rds = 3.4m§Ù, Id = 23A, Id = 27A, DirectFET ISOMETRICÆÐŰÁö
24¿ø 2,400¿ø
HEXFET, Pä³Î, Vd = -30V, Rds = 13.5m§Ù, Id = -11A@Vgs = -10V, SOIC8ÇÉ
11¿ø 1,140¿ø
HEXFET, Nä³Î, Vd = 30V, Rds = 13.8m§Ù, Id = 11A, SOIC8ÆÐŰÁö
14¿ø 1,440¿ø
HEXFET Power MOSFET, Nä³Î, Vd = 55V, Rds = 0.16§Ù, Id = 1.9A, SOT-223ÆÐŰÁö,
7¿ø 720¿ø
HEXFET Power MOSFET, Nä³Î, Vd = 30V, Rds = 0.019§Ù, Id = 55A, D-PAKÆÐŰÁö
17¿ø 1,680¿ø
Pä³Î, Vdss = -100V, Rds = 1.2§Ù, Id = -4.0A, D-2PAK
11¿ø 1,080¿ø
Dual P-Channel PowerTrench MOSFET, Vdss -20V, Rds(on) 0.075Ohm, Id +/-3.4A, SOIC-8
7¿ø 720¿ø
P-Channel 1.25-W, 1.8-V (G-S) MOSFET, Vdss -8V, Rds(on) 0.044Ohm, Id +/-3.5A, TO-236 (SOT-23)
10¿ø 1,000¿ø
ÃʼÒÇü ½´ÆÛSOT-6ŸÀÔÀÇ Nä³Î°ú Pä³Î MOSFETµ¿½Ã³»Àå ÀåºñÀÇ ÆÄ¿öÄÁÆ®·Ñ¿ëÀ¸·Î ÀûÇÕ
4¿ø 360¿ø
¼Ò½ÅÈ£¿ë MOSFET, Nä³Î, ¼ÒÇüÆÐŰÁö SC-70, Vdss = 30V, Id = 270mA
4¿ø 360¿ø
HEXFET POWER MOSFET, SOIC8ÇÉ ¼ÒÇüŸÀÔ, ³ÐÀº¿ÂµµÀÛµ¿¿µ¿ª, Nä³Î, Vd = 30V, Rds = 11m§Ù, Id = 12A
11¿ø 1,080¿ø
ÆÄ¿ö MOSFET, Nä³Î, ¼ÒÇüÆÐŰÁö SOT-23, Vdss = 20V, Id = 3.2A
5¿ø 480¿ø
ÆÄ¿ö MOSFET, Pä³Î, ¼ÒÇüÆÐŰÁö SOT-23, Vdss = -30V, Id = -1.95A, Rds = 240 m Ohms/-4.5V
6¿ø 600¿ø
ÆÄ¿ö MOSFET, Nä³Î, ¼ÒÇüÆÐŰÁö SOT-23, Vdss = 30V, Id = 2.5A, Rds = 105m ohms/4.5V
6¿ø 600¿ø
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET, Nä³Î 30V 10A, SOIC-8
8¿ø 750¿ø
N-Channel PowerTrench MOSFET, Vdss 100V, Rds(on) 16m Ohm, Id 61A, TO-220AB
23¿ø 2,280¿ø
Trans JFET, Nä³Î 40V 50mA Through Hole Switch, TO-92-3
5¿ø 540¿ø
MOSFET 500V N-Channel QFET, TO-220-3
12¿ø 1,200¿ø
Power MOSFET, Nä³Î ( VDSS = 200V , RDS(on)max = 0.082¥Ø , ID = 31A )
36¿ø 3,600¿ø
HEXFET Power MOSFET, Nä³Î ( VDSS = 200V , RDS(on) = 0.40¥Ø , ID = 9.0A )
17¿ø 1,740¿ø
HEXFET Power MOSFET, Pä³Î, Vd = -100V, Rds = 0.117§Ù, Id = -23A, TO-220ÆÐŰÁö
20¿ø 2,040¿ø
HEXFET, Pä³Î, Vd = -200V, Rds = 0.50§Ù, Id = -12A, TO-247ÆÐŰÁö
22¿ø 2,160¿ø
HEXFET, Nä³Î, Vd = 55V, Rds = 14m¥Ø, Id = 64A, TO-220ÆÐŰÁö
10¿ø 1,020¿ø
Nä³Î, Vdss=400V, Rds= 0.3§Ù, Id= 17A, TO-3P
54¿ø 5,400¿ø
Vds = 400V, Rds = 3.6 ohms, Id = 2.0 A, Nä³Î, TO-220
14¿ø 1,440¿ø
HEXFET, Nä³Î, Vd = 400V, Rds = 0.55§Ù, Id = 11A, TO-247ÆÐŰÁö
26¿ø 2,640¿ø
HEXFET¢ç Power MOSFET , Nä³Î (Vdss = 200V, Rds(on) = 1.5¥Ø , Id = 3.3A) TO-220
15¿ø 1,500¿ø
HEXFET, Nä³Î, Vd = 600V, Rds = 0.60§Ù, Id = 11A, TO-247ÆÐŰÁö
42¿ø 4,200¿ø
HEXFET Power MOSFET, Nä³Î (Vdss = 200V, Rds(on) = 0.80¥Ø , Id = 5.2A)
15¿ø 1,500¿ø
Vds = -100V, Rds = 0.06 ohms, Id = -40A, Pä³Î, TO-220
38¿ø 3,780¿ø
HEXFET, Nä³Î, Vd = 800V, Rds = 2.0§Ù, Id = 5.4A, TO-247ÆÐŰÁö
38¿ø 3,840¿ø
N-Channel MOSFET, Vdss = 200V, Rds = 0.085§Ù, Id = 30A, TO-247AC
35¿ø 3,480¿ø
HEXFET, Nä³Î, Vd = 55V, Rds = 0.040§Ù, Id = 29A, TO-220ÆÐŰÁö
7¿ø 660¿ø
N-Channel, Vdss=500V, Rds=0.27§Ù, Id=20A, TO-247
35¿ø 3,480¿ø
HEXFET, Nä³Î, Vd = 55V, Rds = 0.07§Ù, Id = 17A, TO-220ÆÐŰÁö
9¿ø 860¿ø
HEXFET, Nä³Î, Vd = 55V, Rds = 16.5m§Ù, Id = 53A, TO-220
9¿ø 900¿ø
HEXFET, Nä³Î, Vd = 200V, Rds = 0.15§Ù, Id = 18A, TO-220
7¿ø 720¿ø
HEXFET, Nä³Î, Vd = 55V, Rds = 17.5m¥Ø, Id = 49A, TO-220ÆÐŰÁö
5¿ø 540¿ø
HEXFET, Nä³Î, Vd = 600V, Rds = 2.2§Ù, Id = 3.6A, D2PakÆÐŰÁö
52¿ø 5,160¿ø
Pä³Î MOSFET, SMD-220ŸÀÔ, Vdss = -200V, Rds = -0.5ohm, Id = -11A, IRF640°ú ÇѽÖÀÔ´Ï´Ù.
12¿ø 1,200¿ø
HEXFET, Nä³Î, Vd = 100V, Rds = 44m§Ù, Id = 33A, TO-220
11¿ø 1,140¿ø
Nä³Î, Vdss = 200V, Rds = 0.18§Ù, Id = 18A, TO-220
12¿ø 1,200¿ø
SMPS MOSFET, Nä³Î, Vd = 600V, Rds = 210m§Ù, Id = 26A, TO-247ÆÐŰÁö
74¿ø 7,440¿ø
HEXFET, Nä³Î, Vd = -200V, Rds = 0.50§Ù, Id = -11A, TO-220
18¿ø 1,800¿ø
N-Channel HEXFET MOSFET, Vdss = 55V, Rds = 0.008§Ù, Id = 104A, TO-220
29¿ø 2,880¿ø