|
 |
HEXFET, Nä³Î, Vd = 100V, Rds = 44m§Ù, Id = 33A, D2-PakÆÐŰÁö
|
18¿ø |
1,770¿ø |
|
 |
HEXFET, Pä³Î, Vd = -12V, Rds = 0.007§Ù, Id = -16A, SOIC8ÇÉ
|
18¿ø |
1,800¿ø |
|
 |
HEXFET, Nä³Î, Vd = 30V, Rds = 0.030§Ù, Id = 7.3A , SOIC8ÇÉ
|
7¿ø |
690¿ø |
|
 |
HEXFET, Nä³Î, Vd = 200V, Rds = 1.5§Ù, Id = 2.6A , D-PackÆÐŰÁö
|
16¿ø |
1,560¿ø |
|
 |
Nä³Î MOSFET, SOT23ÆÐŰÁö, Vdss=30V, Rds=0.25, Id = 1.2A
|
36¿ø |
3,600¿ø |
|
 |
HEXFET, Nä³Î, Vd = 20V, Rds = 0.045§Ù, Id = 4.2A, SOT-23ÆÐŰÁö
|
24¿ø |
2,400¿ø |
|
 |
NONPBÁ¦Ç°ÀÔ´Ï´Ù. Nä³Î MOSFET, SMD-220ŸÀÔ, Nä³Î, Vdss = 200V, Rds = 0.18ohm, Id = 18A
|
12¿ø |
1,200¿ø |
|
 |
Pä³Î MOSFET, ÃʼÒÇü SOT23ÆÐŰÁö, HEXFET, Vd = -12V, Rds = 0.05§Ù, Id = 48A, Id = 4.3A
|
24¿ø |
2,400¿ø |
|
 |
HEXFET, Nä³Î, Vd = 500V, Rds = 0.85§Ù, Id = 8.0A, D2-Pak
|
13¿ø |
1,320¿ø |
|
 |
HEXFET, Pä³Î, Vd = -30V, Rds = 0.045§Ù, Id = -5.8A, SOIC8ÇÉ ÆÐŰÁö
|
9¿ø |
900¿ø |
|
 |
HEXFET, Nä³Î , Vd = 50V, Rds = 0.130§Ù, Id = 3.0A, SOIC 8ÇÉ, MOSFET2°³
|
9¿ø |
940¿ø |
|
 |
HEXFET Power MOSFET, Pä³Î, Vd = -55V, Rds = 20m§Ù, Id = -42A, D2PakÆÐŰÁö
|
29¿ø |
2,880¿ø |
|
 |
MOSFET, Nä³Î, Vd = 55V, Rds = 0.14¥Ø, Id = 2.0A, SOT-223ÆÐŰÁö
|
5¿ø |
480¿ø |
|
 |
P-Channel HEXFET Power MOSFET, Vdss = -20V, Rds = 0.040§Ù, Id = -6.7A @ 25µµ Vgs =-4.5V
|
11¿ø |
1,080¿ø |
|
 |
¼Ò½ÅÈ£¿ë P-Channel MOSFET, Vdss = -20V, Rds = 0.60§Ù, SOT-23
|
24¿ø |
2,400¿ø |
|
 |
ÃʼÒÇü ÆÐŰÁöÀÇ MOSFET CPUÄÚ¾î DC-DCÄÁ¹öÅÍ¿¡ Àû´ç.., Nä³Î, Vd = 30V, Rds = 3.4m§Ù, Id = 23A, Id = 27A, DirectFET ISOMETRICÆÐŰÁö
|
24¿ø |
2,400¿ø |
|
 |
HEXFET, Pä³Î, Vd = -30V, Rds = 13.5m§Ù, Id = -11A@Vgs = -10V, SOIC8ÇÉ
|
11¿ø |
1,140¿ø |
|
 |
HEXFET, Nä³Î, Vd = 30V, Rds = 13.8m§Ù, Id = 11A, SOIC8ÆÐŰÁö
|
14¿ø |
1,440¿ø |
|
 |
HEXFET Power MOSFET, Nä³Î, Vd = 55V, Rds = 0.16§Ù, Id = 1.9A, SOT-223ÆÐŰÁö,
|
7¿ø |
720¿ø |
|
 |
HEXFET Power MOSFET, Nä³Î, Vd = 30V, Rds = 0.019§Ù, Id = 55A, D-PAKÆÐŰÁö
|
17¿ø |
1,680¿ø |
|
 |
Pä³Î, Vdss = -100V, Rds = 1.2§Ù, Id = -4.0A, D-2PAK
|
11¿ø |
1,080¿ø |
|
 |
Dual P-Channel PowerTrench MOSFET, Vdss -20V, Rds(on) 0.075Ohm, Id +/-3.4A, SOIC-8
|
7¿ø |
720¿ø |
|
 |
P-Channel 1.25-W, 1.8-V (G-S) MOSFET, Vdss -8V, Rds(on) 0.044Ohm, Id +/-3.5A, TO-236 (SOT-23)
|
10¿ø |
1,000¿ø |
|
 |
ÃʼÒÇü ½´ÆÛSOT-6ŸÀÔÀÇ Nä³Î°ú Pä³Î MOSFETµ¿½Ã³»Àå ÀåºñÀÇ ÆÄ¿öÄÁÆ®·Ñ¿ëÀ¸·Î ÀûÇÕ
|
4¿ø |
360¿ø |
|
 |
¼Ò½ÅÈ£¿ë MOSFET, Nä³Î, ¼ÒÇüÆÐŰÁö SC-70, Vdss = 30V, Id = 270mA
|
4¿ø |
360¿ø |
|
 |
HEXFET POWER MOSFET, SOIC8ÇÉ ¼ÒÇüŸÀÔ, ³ÐÀº¿ÂµµÀÛµ¿¿µ¿ª, Nä³Î, Vd = 30V, Rds = 11m§Ù, Id = 12A
|
11¿ø |
1,080¿ø |
|
 |
ÆÄ¿ö MOSFET, Nä³Î, ¼ÒÇüÆÐŰÁö SOT-23, Vdss = 20V, Id = 3.2A
|
5¿ø |
480¿ø |
|
 |
ÆÄ¿ö MOSFET, Pä³Î, ¼ÒÇüÆÐŰÁö SOT-23, Vdss = -30V, Id = -1.95A, Rds = 240 m Ohms/-4.5V
|
6¿ø |
600¿ø |
|
 |
ÆÄ¿ö MOSFET, Nä³Î, ¼ÒÇüÆÐŰÁö SOT-23, Vdss = 30V, Id = 2.5A, Rds = 105m ohms/4.5V
|
6¿ø |
600¿ø |
|
 |
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET, Nä³Î 30V 10A, SOIC-8
|
8¿ø |
750¿ø |
|
 |
N-Channel PowerTrench MOSFET, Vdss 100V, Rds(on) 16m Ohm, Id 61A, TO-220AB
|
23¿ø |
2,280¿ø |
|
 |
Trans JFET, Nä³Î 40V 50mA Through Hole Switch, TO-92-3
|
5¿ø |
540¿ø |
|
 |
MOSFET 500V N-Channel QFET, TO-220-3
|
12¿ø |
1,200¿ø |
|
 |
Power MOSFET, Nä³Î ( VDSS = 200V , RDS(on)max = 0.082¥Ø , ID = 31A )
|
36¿ø |
3,600¿ø |
|
 |
HEXFET Power MOSFET, Nä³Î ( VDSS = 200V , RDS(on) = 0.40¥Ø , ID = 9.0A )
|
17¿ø |
1,740¿ø |
|
 |
HEXFET Power MOSFET, Pä³Î, Vd = -100V, Rds = 0.117§Ù, Id = -23A, TO-220ÆÐŰÁö
|
20¿ø |
2,040¿ø |
|
 |
HEXFET, Pä³Î, Vd = -200V, Rds = 0.50§Ù, Id = -12A, TO-247ÆÐŰÁö
|
22¿ø |
2,160¿ø |
|
 |
HEXFET, Nä³Î, Vd = 55V, Rds = 14m¥Ø, Id = 64A, TO-220ÆÐŰÁö
|
10¿ø |
1,020¿ø |
|
 |
Nä³Î, Vdss=400V, Rds= 0.3§Ù, Id= 17A, TO-3P
|
54¿ø |
5,400¿ø |
|
 |
Vds = 400V, Rds = 3.6 ohms, Id = 2.0 A, Nä³Î, TO-220
|
14¿ø |
1,440¿ø |
|
 |
HEXFET, Nä³Î, Vd = 400V, Rds = 0.55§Ù, Id = 11A, TO-247ÆÐŰÁö
|
26¿ø |
2,640¿ø |
|
 |
HEXFET¢ç Power MOSFET , Nä³Î (Vdss = 200V, Rds(on) = 1.5¥Ø , Id = 3.3A) TO-220
|
15¿ø |
1,500¿ø |
|
 |
HEXFET, Nä³Î, Vd = 600V, Rds = 0.60§Ù, Id = 11A, TO-247ÆÐŰÁö
|
42¿ø |
4,200¿ø |
|
 |
HEXFET Power MOSFET, Nä³Î (Vdss = 200V, Rds(on) = 0.80¥Ø , Id = 5.2A)
|
15¿ø |
1,500¿ø |
|
 |
Vds = -100V, Rds = 0.06 ohms, Id = -40A, Pä³Î, TO-220
|
38¿ø |
3,780¿ø |
|
 |
HEXFET, Nä³Î, Vd = 800V, Rds = 2.0§Ù, Id = 5.4A, TO-247ÆÐŰÁö
|
38¿ø |
3,840¿ø |
|
 |
N-Channel MOSFET, Vdss = 200V, Rds = 0.085§Ù, Id = 30A, TO-247AC
|
35¿ø |
3,480¿ø |
|
 |
HEXFET, Nä³Î, Vd = 55V, Rds = 0.040§Ù, Id = 29A, TO-220ÆÐŰÁö
|
7¿ø |
660¿ø |
|
 |
N-Channel, Vdss=500V, Rds=0.27§Ù, Id=20A, TO-247
|
35¿ø |
3,480¿ø |
|
 |
HEXFET, Nä³Î, Vd = 55V, Rds = 0.07§Ù, Id = 17A, TO-220ÆÐŰÁö
|
9¿ø |
860¿ø |
|
 |
HEXFET, Nä³Î, Vd = 55V, Rds = 16.5m§Ù, Id = 53A, TO-220
|
9¿ø |
900¿ø |
|
 |
HEXFET, Nä³Î, Vd = 200V, Rds = 0.15§Ù, Id = 18A, TO-220
|
7¿ø |
720¿ø |
|
 |
HEXFET, Nä³Î, Vd = 55V, Rds = 17.5m¥Ø, Id = 49A, TO-220ÆÐŰÁö
|
5¿ø |
540¿ø |
|
 |
HEXFET, Nä³Î, Vd = 600V, Rds = 2.2§Ù, Id = 3.6A, D2PakÆÐŰÁö
|
52¿ø |
5,160¿ø |
|
 |
Pä³Î MOSFET, SMD-220ŸÀÔ, Vdss = -200V, Rds = -0.5ohm, Id = -11A, IRF640°ú ÇѽÖÀÔ´Ï´Ù.
|
12¿ø |
1,200¿ø |
|
 |
HEXFET, Nä³Î, Vd = 100V, Rds = 44m§Ù, Id = 33A, TO-220
|
11¿ø |
1,140¿ø |
|
 |
Nä³Î, Vdss = 200V, Rds = 0.18§Ù, Id = 18A, TO-220
|
12¿ø |
1,200¿ø |
|
 |
SMPS MOSFET, Nä³Î, Vd = 600V, Rds = 210m§Ù, Id = 26A, TO-247ÆÐŰÁö
|
74¿ø |
7,440¿ø |
|
 |
HEXFET, Nä³Î, Vd = -200V, Rds = 0.50§Ù, Id = -11A, TO-220
|
18¿ø |
1,800¿ø |
|
 |
N-Channel HEXFET MOSFET, Vdss = 55V, Rds = 0.008§Ù, Id = 104A, TO-220
|
29¿ø |
2,880¿ø |